| PART |
Description |
Maker |
| SH10DC40 |
Latest generation MOSFET technology
|
Teledyne Technologies I...
|
| IRF7413GTRPBF IRF7413GPBF |
Generation V Technology
Ultra Low On-Resistance
|
International Rectifier
|
| IRF7304PBF IRF7304TRPBF |
Generation V Technology
HEXFET Power MOSFET
|
International Rectifier
|
| IRF7343PBF IRF7343TRPBF |
generation v technology
HEXFET Power MOSFET
|
International Rectifier
|
| IRLML2803TRPBF |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
| KRF7401 |
Generation V Technology Ultra Low On-Resistance N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| KRF7313 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| KRF7379 |
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge
|
TY Semiconductor Co., Ltd
|
| SGB20N60 SGB20N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| IRF7201 IRF7201PBF IRF7201TR |
Generation V Technology
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| SGP02N12007 SGP02N120 SGD02N120 SGI02N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB30N6009 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
